Details

Autor(en) / Beteiligte

• Coudrain, P.
• Magnan, P.
• Batude, P.
• Gagnard, X.
• Leyris, C.
• Vinet, M.
• Castex, A.
• Lagahe-Blanchard, C.
• Pouydebasque, A.
• Cazaux, Y.
• Giffard, B.
• Ancey, P.

Titel

Investigation of a Sequential Three-Dimensional Process for Back-Illuminated CMOS Image Sensors With Miniaturized Pixels

Ist Teil von

• IEEE transactions on electron devices, 2009-11, Vol.56 (11), p.2403-2413

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2009

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A new 3-D CMOS image sensor architecture is presented as a potential candidate for submicrometer pixels. To overcome the scaling challenge related to miniaturized pixel design rules, far beyond traditional 3-D stacking alignment capabilities, a sequential construction is applied. This paper gives a technical overview of this 3-D scheme and validates a part of its building blocks. As a consequence of a sequential process, the thermal budget is limited to ensure bottom device immunity. Subsequently, high-quality SOI film transfer above the first layer by direct bonding and etch back is demonstrated. Finally, the low-temperature processing of HfO 2 /TiN fully depleted silicon-on-insulator readout transistors is detailed and evaluated from a low frequency noise point of view.