Details

Autor(en) / Beteiligte

• Sano, K.
• Fujikura, H.
• Konno, T.
• Kaneki, S.
• Ichikawa, S.
• Kojima, K.

Titel

Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals

Ist Teil von

• Applied physics letters, 2024-06, Vol.124 (23)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2024

Quelle

American Institute of Physics (AIP) Journals

Beschreibungen/Notizen

• The external quantum efficiency (EQE) and internal quantum efficiency (IQE) of radiation are quantified by omnidirectional photoluminescence measurements using an integrating sphere for two types of GaN crystals with different carbon concentrations ([C] =  1 × 10 14   cm − 3 ,   2 × 10 15   cm − 3). In the sample with lower [C], when the excitation density is 140  W   cm − 2, the EQE and IQE for near-band-edge (NBE) emission are 0.787% and 21.7%, respectively. The relationship between [C] and the IQE for NBE emission indicates that carbon impurities work as effective nonradiative recombination centers (NRCs) in n-type GaN, and major NRCs switch from carbon impurities to intrinsic NRCs, such as vacancies, when [C] falls below 3.5 × 10 14   cm − 3.