Details

Autor(en) / Beteiligte

• Oliveira, Gabriel Henrique Inácio
• Escote, Márcia T.
• Nantes, Iseli L.
• Criado, Denise

Titel

Versatile r.f. magnetron sputtering doping method to produce aluminum‐doped zinc oxide films

Ist Teil von

• Journal of the American Ceramic Society, 2024-07, Vol.107 (7), p.4729-4737

Ort / Verlag

Columbus: Wiley Subscription Services, Inc

Erscheinungsjahr

2024

Link zum Volltext

Quelle

Wiley Blackwell Single Titles

Beschreibungen/Notizen

• Aluminum‐doped zinc oxide Al:ZnO (AZO) is a non‐toxic material applied as a transparent conductive oxide film. In this study, we report on the structural, optical, and electrical properties of AZO films obtained by thermally oxidizing aluminum‐doped Zn films produced by a versatile and low‐cost method of doping using the magnetron sputtering technique deposition. We use aluminum wire above the zinc target to produce Al:Zn films. The influence of r.f. power and different Al wire lengths on the AZO film properties were studied. The resulting AZO films exhibited Al concentrations of up to 2.85% and an optical gap between 3.22 and 3.29 eV. The transmittance was greater than 80% for all samples, and the electrical resistivity decreased by two orders of magnitude with Al doping. As a result, the sample with an aluminum concentration of approximately 1% had the lowest resistivity. In this work, it was possible to relate the lower resistivity with larger grain size and smaller concentrations of defects or vacancies.