Details

Autor(en) / Beteiligte

• Milanesio, M.
• Paolozzi, L.
• Moretti, T.
• Latshaw, A.
• Bonacina, L.
• Cardella, R.
• Kugathasan, T.
• Picardi, A.
• Elviretti, M.
• Rücker, H.
• Cardarelli, R.
• Cecconi, L.
• Fenoglio, C.A.
• Ferrere, D.
• Gonzalez-Sevilla, S.
• Iodice, L.
• Kotitsa, R.
• Magliocca, C.
• Nessi, M.
• Pizarro-Medina, A.
• Sabater Iglesias, J.
• Semendyaev, I.
• Saidi, J.
• Vicente Barreto Pinto, M.
• Zambito, S.
• Iacobucci, G.

Titel

Time resolution of a SiGe BiCMOS monolithic silicon pixel detector without internal gain layer with a femtosecond laser

Ist Teil von

• Journal of instrumentation, 2024-04, Vol.19 (4), p.P04029

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2024

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Abstract The time resolution of the second monolithic silicon pixel prototype produced for the MONOLITH H2020 ERC Advanced project was studied using a femtosecond laser. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by low-noise and very fast SiGe HBT frontend electronics. Silicon wafers with 50 μm thick epilayer with a resistivity of 350 Ωcm were used to produce a fully depleted sensor. At the highest frontend power density tested of 2.7 W/cm 2 , the time resolution with the femtosecond laser pulses was found to be 45 ps for signals generated by 1200 electrons, and 3 ps in the case of 11k electrons, which corresponds approximately to 0.4 and 3.5 times the most probable value of the charge generated by a minimum-ionizing particle. The results were compared with testbeam data taken with the same prototype to evaluate the time jitter produced by the fluctuations of the charge collection.