Details

Autor(en) / Beteiligte

• Gerardin, S.
• Bagatin, M.
• Paccagnella, A.
• Beltrami, S.
• Benvenuti, A.
• Cazzaniga, C.

Titel

Depth Dependence of Neutron-Induced Errors in 3-D NAND Floating Gate Cells

Ist Teil von

• IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.508-514

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2024

Quelle

IEEE Xplore

Beschreibungen/Notizen

• The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous at the center of the pillar, mainly due to the impact of top-to-bottom tapering on the electrical characteristics of the floating gate (FG) cells and, to a smaller extent, to a different generation of neutron secondaries as a function of depth.