Details

Autor(en) / Beteiligte

• Alizadeh, Amirreza
• Hassanzadehyamchi, Saleh
• Moradinia, Arya
• Nazhad, Ata Sarrafi
• Frounchi, Milad
• Momeni, Omeed
• Niknejad, Ali M.
• Cressler, John D.
• Kiaei, Sayfe

Titel

D -Band Active Transmission Line With 33-GHz Bandwidth and 13-dB Gain at f max /2

Ist Teil von

• IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2452-2465

Ort / Verlag

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

Erscheinungsjahr

2024

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This article presents a [Formula Omitted]-band multisection active transmission line (ATL), where each ATL Section consists of a microstrip TL and a cascode [Formula Omitted] cell that senses the TL output and returns a feedback signal to its input. The employed shunt-to-shunt positive feedback compensates the TL loss, amplifies the signal traveling through the TL, and therefore results in a bandpass positive gain with a center frequency of [Formula Omitted]. The ATL Section can achieve broadband return losses (RLs) of better than 15 dB over 200% fractional bandwidth (BW) when it is perfectly matched at its input and output ports at [Formula Omitted] (i.e., [Formula Omitted] at [Formula Omitted]). The proposed ATL Section is a promising choice to be used as the building block of stagger-tuned amplifiers (STAs) since, unlike the tuned-load stages, it does not introduce a mismatch between the neighboring stages in the chain and hence does not limit the overall RL BW of the STA. Assuming that the TL has a characteristic impedance of [Formula Omitted], the maximum gain BW (GBW) of each ATL Section is achieved when it is terminated to [Formula Omitted] at its input and output ports, leading to [Formula Omitted] of 1.51 dB, 3-dB and RL BW of 300 GHz, and GBW of 357 GHz around [Formula Omitted] GHz. Multiple ATL sections should be cascaded to obtain a reasonable gain and noise-figure (NF) performance. It is shown that a multisection ATL features a better BW compared to a cascade of identical tuned amplifiers and STAs. To verify the theoretical derivations, a proof-of-concept 17-stage ATL is designed and implemented in a 130-nm silicon germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) technology with [Formula Omitted] of 290 GHz. The prototype circuit features a 13-dB average gain over 136–169-GHz BW and supports amplification up to [Formula Omitted] of the technology.