Details

Autor(en) / Beteiligte

• Mikhailova, M. P.
• Dmitriev, A. P.
• Andreev, I. A.
• Ivanov, E. V.
• Kunitsyna, E. V.
• Yakovlev, Yu. P.

Titel

Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review)

Ist Teil von

• Semiconductors (Woodbury, N.Y.), 2023-12, Vol.57 (12), p.554-569

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2023

Quelle

SpringerLink

Beschreibungen/Notizen

• The results of theoretical and experimental studies of impact ionization processes and charge carrier heating in multi-valley A III B V semiconductors at high electric field are presented and their relationship with the features of the band structure is discussed. A role of subsidiary L - and X -valleys, complex structure of the valence band and orientation dependence of the ionization coefficients are taken into account. A new approach to the choice of semiconductor materials with a large ratio of the ionization coefficients of holes and electrons to create the noiseless avalanche photodiodes due to monopolarity of hot charge carrier multiplication is proposed.