Details

Autor(en) / Beteiligte

• Jiang, Shangwei
• Kuang, Zhixiang
• Hu, Xiaoming
• Chen, Xin
• Zou, Fuxiang
• Fan, Xi’an

Titel

Study on the Preparation and Properties of a Co-Based Barrier Layer by Diffusion Welding

Ist Teil von

• Journal of electronic materials, 2024-04, Vol.53 (4), p.1720-1730

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2024

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In order to improve the stability of Bi 2 Te 3 -based thermoelectric devices, we attempted to prepare a barrier layer via diffusion welding using Co powder as the barrier materials. The diffusion welding process was conducted at 674 K for a duration of 5 min. The optimal connection was achieved at the interfaces of Co/Bi 0.4 Sb 1.6 Te 3 and Co/Bi 2 Te 2.7 Se 0.3 . The results showed that the Co/Bi 0.4 Sb 1.6 Te 3 joint had diffusion thickness of 1.6 µm, contact resistivity of 0.83 µΩ cm 2 , and bonding strength of 4.86 MPa for the barrier layer. Similarly, the Co/Bi 2 Te 2.7 Se 0.3 joint had diffusion thickness of 1.6 µm, contact resistivity of 0.75 µΩ cm 2 , and bonding strength of 3.99 MPa for the barrier layer. The thermoelectric device fabricated through this process exhibited a hot–cold cycle number of 35,000, which was significantly higher than the device with a Ni-based barrier layer under similar experimental conditions. Thus, it indicates that Co is a promising material for the preparation of barrier layers in Bi 2 Te 3 -based thermoelectric devices.