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Study on the Preparation and Properties of a Co-Based Barrier Layer by Diffusion Welding
Ist Teil von
Journal of electronic materials, 2024-04, Vol.53 (4), p.1720-1730
Ort / Verlag
New York: Springer US
Erscheinungsjahr
2024
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
In order to improve the stability of Bi
2
Te
3
-based thermoelectric devices, we attempted to prepare a barrier layer via diffusion welding using Co powder as the barrier materials. The diffusion welding process was conducted at 674 K for a duration of 5 min. The optimal connection was achieved at the interfaces of Co/Bi
0.4
Sb
1.6
Te
3
and Co/Bi
2
Te
2.7
Se
0.3
. The results showed that the Co/Bi
0.4
Sb
1.6
Te
3
joint had diffusion thickness of 1.6 µm, contact resistivity of 0.83 µΩ cm
2
, and bonding strength of 4.86 MPa for the barrier layer. Similarly, the Co/Bi
2
Te
2.7
Se
0.3
joint had diffusion thickness of 1.6 µm, contact resistivity of 0.75 µΩ cm
2
, and bonding strength of 3.99 MPa for the barrier layer. The thermoelectric device fabricated through this process exhibited a hot–cold cycle number of 35,000, which was significantly higher than the device with a Ni-based barrier layer under similar experimental conditions. Thus, it indicates that Co is a promising material for the preparation of barrier layers in Bi
2
Te
3
-based thermoelectric devices.