Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Electrical and electrothermal properties of few-layer 2D devices
Ist Teil von
Journal of computational electronics, 2021-02, Vol.20 (1), p.2-12
Ort / Verlag
New York: Springer US
Erscheinungsjahr
2021
Link zum Volltext
Quelle
SpringerNature Journals
Beschreibungen/Notizen
While two-dimensional (2D) materials have emerged as a new platform for nanoelectronic devices with improved electronic, optical, and thermal properties, and their heightened sensitivity to electrostatic and mechanical interactions with their environment has proved to be a bottleneck. Few-layer (FL) 2D devices retain the desirable thinness of their monolayer cousins while boosting carrier mobility. Here, we employ an electrothermal model to study FL field-effect devices made from transition metal dichalcogenides MoS
2
and WSe
2
and examine the effect of both electrical and thermal interlayer resistances, as well as the thermal boundary resistance to the substrate, on device performance. We show that overall conductance improves with increasing thickness (number of layers) at small gate voltages, but exhibits a peak for large gate voltages. Joule heating impacts performance due to relatively poor thermal conductance to the substrate and this impact, along with the location of the hot spot in the FL stack, varies with carrier screening length of the material. We conclude that coupled electrothermal simulation can be employed to design FL 2D devices with improved performance.