Details

Autor(en) / Beteiligte

• Morimoto, Atsuki
• Hirai, Towa
• Takazaiku, Ayato
• Eto, Yo
• Kuwazuru, Hajime
• Takakura, Kenichiro
• Tsunoda, Isao

Titel

Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing

Ist Teil von

• Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

Ort / Verlag

Tokyo: IOP Publishing

Erscheinungsjahr

2024

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Abstract Magnesium (Mg)-induced lateral crystallization (Mg-ILC) of amorphous germanium (Ge) on a SiO 2 stacked structure was investigated. From Raman mapping images, the critical annealing temperature necessary to induce Mg-ILC of amorphous Ge was estimated to be about 350 °C. Furthermore, the Mg-ILC length was truly narrow (∼2 μ m) compared with other metal catalysts after annealing at 350 °C for 1 h. To enhance the Mg-ILC, we have examined a two-step annealing method for Mg-ILC of amorphous Ge on SiO 2 . The Mg-ILC length is significantly enhanced (∼4.5 times) by using a two-step annealing process, which is due to the enhancement of Mg diffusion into amorphous Ge during first-stage low-temperature annealing.