Details

Autor(en) / Beteiligte

• Hadi, Ali J.
• Nayef, Uday M.
• Mutlak, Falah A.-H.
• Jabir, Majid S.

Titel

Enhanced photodetection performance of vanadium pentoxide nanostructures deposited on porous silicon substrate via pulsed laser deposition

Ist Teil von

• Optical and quantum electronics, 2024-03, Vol.56 (3), Article 321

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2024

Quelle

SpringerLink

Beschreibungen/Notizen

• The combination of common semiconductors with porous materials has the potential to augment the splitting of electrons and holes, hence increasing the efficiency of photodetectors. In the current study, we present the efficient fabrication of photodetectors consisting of vanadium pentoxide (V 2 O 5 ) and macroporous structures via the pulsed laser deposition technique. The structure, surface morphology, and optical properties of V 2 O 5 nanostructures embedded in porous silicon were examined using an X-ray diffractometer, a field emission scanning electron microscope, and a UV–Vis–NIR diffuse reflectance spectrophotometer, photoluminescence emission spectra, and Fourier transformation infrared spectroscopy. The findings indicate that the V 2 O 5 nanostructure exhibits an orthorhombic crystal structure, which tends to align along the (001) plane. These nanostructures were distributed on porous silicon surfaces, mainly within the pores, which range in size from 52.4 nm to 106.5 nm. The level of pore filling varies depending on the laser energy used, ranging from partial to almost complete filling. The room-temperature photoluminescence peaks of V 2 O 5 nanostructure/porous silicon possess four distinct spectra characterized by their maximum emission wavelengths of around 461 nm and 664 nm.However, the electrical and spectral responsivity properties were measured before and after introducing V 2 O 5 nanostructures into porous silicon. The ideality factor of porous silicon has decreased after embedding V 2 O 5 nanostructure in porous silicon. The deposition of V 2 O 5 nanostructures into porous silicon resulted in a significant rise in spectrum responsivity, particularly at a wavelength of 471 nm. Moreover, the spectral responsivity exhibited a rising trend with increasing laser energy, reaching a maximum value of 0.31 A/W. The external quantum efficiency found its highest value at 78.93% when more incredible laser energy was used. The V 2 O 5 nanostructure/porous silicon device fabricated in this work, consisting of a V 2 O 5 nanostructure integrated with porous silicon, has remarkable potential as a high-efficiency photodetector in several photoelectronic technologies.