Details

Autor(en) / Beteiligte

• Chen, Guangshou
• Cong, Haofei
• Chang, Yu
• Zhang, Yu
• Zhou, Ruifu
• Wang, Yuxiao
• Qin, Yuanbin
• Liu, Xuhai
• Wang, Fengyun

Titel

From conductor to semiconductor: Diameter tuning of electrospun ITO nanowire for low-cost electronics

Ist Teil von

• Science China materials, 2023-11, Vol.66 (11), p.4445-4452

Ort / Verlag

Beijing: Science China Press

Erscheinungsjahr

2023

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Constructing a semiconducting channel and electrodes using an identical material is a reliable method to fabricate low-cost, high-performance transistors. Wide-bandgap metal oxide semiconductors (MOSs) have been widely applied in various circuits. However, it is still a challenge to make low-cost transistors with a channel and electrodes based on identical MOSs. Here, we applied an electrospinning technique coupled with a nanowire transfer technique to fabricate high-performance, electrical-biased transistors with a one-dimensional indium tin oxide (ITO) nanowire, used as the semiconducting channel and the conducting source/drain (S/D) electrodes. The transition from a regular-conducting ITO to the newly-designed semiconducting ITO was achieved by tuning the needle diameter of the electrospinning nozzle. This method can be extended to the construction of future flexible and transparent transistors with both a channel and S/D electrodes.