Details

Autor(en) / Beteiligte

• Ding, Xiang
• Lan, Zhangsheng
• Zhu, Saike
• Gao, Shifan
• Su, Mingji
• Lee, ChoongHyun
• Zhao, Yi

Titel

Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge

Ist Teil von

• IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-6

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2023

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This work presents the first demonstration of an embedded 0.5-Flash-0.5-RRAM (0.5F0.5R) hybrid memory on Ge, which can be efficiently integrated with advanced Ge logic devices. We explore yttrium (Y)-doped GeO<inline-formula> <tex-math notation="LaTeX">_{\textit{x}}</tex-math> </inline-formula> (YGO) with a range of Y-doping concentrations in GeO<inline-formula> <tex-math notation="LaTeX">_{\textit{x}}</tex-math> </inline-formula> and achieve stable multibit Flash and high mobility logic devices for embedded nonvolatile memories technology by exploiting the superior interface properties of low YGO and the charge-trapping behaviors of high YGO. The Flash and logic devices exhibit the peak electron mobility of 1168 cm<inline-formula> <tex-math notation="LaTeX">^{\text{2}}</tex-math> </inline-formula>/Vs (equivalent oxide thickness (EOT) <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> 18 nm) and 684 cm<inline-formula> <tex-math notation="LaTeX">^{\text{2}}</tex-math> </inline-formula>/Vs (EOT <inline-formula> <tex-math notation="LaTeX">=</tex-math> </inline-formula> 0.8 nm), respectively. By combining a Ge-based resistive memory, the 0.5F0.5R hybrid memory can provide more than 7 b/cell by distributing bits across different physical elements. Furthermore, the negligible disturbance between the two different memories in the 0.5F0.5R structure offers a promising solution for high-density nonvolatile memory applications.