Details

Autor(en) / Beteiligte

• Yang, Huan
• Wang, Bo
• Dong, Wenting
• Ma, Zhikang
• Pan, Wengao
• Lu, Lei
• Zhang, Shengdong

Titel

P‐1.8: Energy‐Band‐Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin‐Film Transistors

Ist Teil von

• SID International Symposium Digest of technical papers, 2023-04, Vol.54 (S1), p.461-463

Ort / Verlag

Campbell: Wiley Subscription Services, Inc

Erscheinungsjahr

2023

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• The energy band dependent mobility in heterojunction amorphous oxide semiconductor thin‐film transistors (TFTs) is investigated. Results indicate that both of the energy band configurations with potential well (PW) and barrier (PB) formation could allow TFT with high‐mobility operation. Specifically, TFT with PW only exhibits high mobility when the gate electric field direction is consistent with that of build‐in electric field in PW, whereas TFT with PB could exhibit high mobility no matter what the electric field direction configuration is.