Details

Autor(en) / Beteiligte

• Khan, Asir Intisar
• Yu, Heshan
• Zhang, Huairuo
• Goggin, John R.
• Kwon, Heungdong
• Wu, Xiangjin
• Perez, Christopher
• Neilson, Kathryn M.
• Asheghi, Mehdi
• Goodson, Kenneth E
• Vora, Patrick M.
• Davydov, Albert
• Takeuchi, Ichiro
• Pop, Eric

Titel

Energy Efficient Neuro‐Inspired Phase–Change Memory Based on Ge4Sb6Te7 as a Novel Epitaxial Nanocomposite

Ist Teil von

• Advanced materials (Weinheim), 2023-07, Vol.35 (30), p.n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2023

Quelle

Wiley Online Library Journals Frontfile Complete

Beschreibungen/Notizen

• Phase‐change memory (PCM) is a promising candidate for neuro‐inspired, data‐intensive artificial intelligence applications, which relies on the physical attributes of PCM materials including gradual change of resistance states and multilevel operation with low resistance drift. However, achieving these attributes simultaneously remains a fundamental challenge for PCM materials such as Ge2Sb2Te5, the most commonly used material. Here bi‐directional gradual resistance changes with ≈10× resistance window using low energy pulses are demonstrated in nanoscale PCM devices based on Ge4Sb6Te7, a new phase‐change nanocomposite material . These devices show 13 resistance levels with low resistance drift for the first 8 levels, a resistance on/off ratio of ≈1000, and low variability. These attributes are enabled by the unique microstructural and electro‐thermal properties of Ge4Sb6Te7, a nanocomposite consisting of epitaxial SbTe nanoclusters within the Ge–Sb–Te matrix, and a higher crystallization but lower melting temperature than Ge2Sb2Te5. These results advance the pathway toward energy‐efficient analog computing using PCM. A novel phase‐change nanocomposite Ge4Sb6Te7 is reported to enable energy‐efficient neuro‐inspired phase–change memory (PCM). Ge4Sb6Te7 ‐based nanoscale PCM devices demonstrate multibit capability, low resistance drift, and bi‐directional gradual resistance changes with ≈10× resistance window using low energy (≈1 pJ) pulses; all facilitated by the unique microstructural and electro–thermal properties of Ge4Sb6Te7.