Details

Autor(en) / Beteiligte

• Guler, I.
• Isik, M.
• Gasanly, N.

Titel

Optical characterization of (TlInS2)0.5(TlInSe2)0.5 crystal by ellipsometry: linear and optical constants for optoelectronic devices

Ist Teil von

• Journal of materials science. Materials in electronics, 2023-06, Vol.34 (17), p.1346, Article 1346

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2023

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• TlInSSe [(TlInS 2 ) 0.5 (TlInSe 2 ) 0.5 ] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25–6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.