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Seoul: The Korean Institute of Metals and Materials
Erscheinungsjahr
2023
Link zum Volltext
Quelle
SpringerLink (Online service)
Beschreibungen/Notizen
Amorphous InGaZnO (a-InGaZnO) thin film transistors (TFTs) with stability and low-temperature deposition are important challenges for their application in flexible electronics. Herein, a-InGaZnO films were successfully obtained throughout the whole process in the room-temperature sputtering system. An intermediate nitrogen treatment a-InGaZnO film link contributed to high performance a-InGaZnO TFTs. The current switching ratio of the optimal nitrogen treatment transistor is close to 10
7
, the field-effect mobility (µ
FE
) is 11.7 cm
2
/Vs and threshold voltage (V
TH
) is − 0.12 V, respectively. And the 4-day threshold voltage offset (ΔV
TH
) is reduced from 12.98 to 4.92 V. The improved electrical properties may be attributed to the reduction of defect concentration and average interfacial trap density due to nitrogen occupation of oxygen vacancies (V
O
).
Graphical Abstract