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Optoelectrical properties extraction using spectroscopic ellipsometry, in case of AZO thin films deposited by DC reactive sputtering in various oxygen concentration
Ist Teil von
Journal of materials science. Materials in electronics, 2023-06, Vol.34 (16), p.1291, Article 1291
Ort / Verlag
New York: Springer US
Erscheinungsjahr
2023
Link zum Volltext
Quelle
SpringerLink (Online service)
Beschreibungen/Notizen
In this article, we have achieved an unprecedented contactless method for extracting the optoelectrical properties of thin films using the spectroscopic ellipsometry technique. Indeed, this semi-experimental method was made by extracting the empirical relations (linear and polynomial) from the results of the extremal values of Ψ ellipsometric angle spectrum in terms of the optoelectrical properties (charge carrier density, resistivity, mobility, and bandgap energy) of AZO thin films. The latter have been deposited on oxidized silicon substrates by direct current reactive magnetron sputtering at room temperature at various oxygen concentrations. A relationship was also reached in function of Ψ that allows the estimation of oxygen concentration inside the depositing chamber. The accuracy of the equations was evaluated to obtain correct predictions for the effectiveness of this contactless.