Details

Autor(en) / Beteiligte

• Zambito, S.
• Milanesio, M.
• Moretti, T.
• Paolozzi, L.
• Munker, M.
• Cardella, R.
• Kugathasan, T.
• Martinelli, F.
• Picardi, A.
• Elviretti, M.
• Rücker, H.
• Trusch, A.
• Cadoux, F.
• Cardarelli, R.
• Débieux, S.
• Favre, Y.
• Fenoglio, C.A.
• Ferrere, D.
• Gonzalez-Sevilla, S.
• Iodice, L.
• Kotitsa, R.
• Magliocca, C.
• Nessi, M.
• Pizarro-Medina, A.
• Sabater Iglesias, J.
• Saidi, J.
• Vicente Barreto Pinto, M.
• Iacobucci, G.

Titel

20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer

Ist Teil von

• Journal of instrumentation, 2023-03, Vol.18 (3), p.P03047

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2023

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Abstract A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thick epilayer of 350 Ωcm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps.