Details

Autor(en) / Beteiligte

• Yang, Jie
• Jiang, Ruiqi
• Chen, Chang
• Chen, Junhui
• Cao, Zixin
• Li, Yawei
• Shang, Liyan
• Jiang, Kai
• Zhang, Jinzhong
• Zhu, Liangqing
• Hu, Zhigao
• Chu, Junhao

Titel

Exploration on the growth of Bi2O2Se films and nanosheet by an ALD-assisted CVD method

Ist Teil von

• Journal of materials science. Materials in electronics, 2023-03, Vol.34 (9), p.788, Article 788

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2023

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The emerging two-dimensional bismuth selenium oxide (2D Bi 2 O 2 Se) has attracted great attention due to its high mobility and excellent air stability. Bi 2 O 2 Se with different morphologies, including the film and the nanosheet can be obtained by the chemical vapor deposition (CVD) method. However, the growth mode during the synthesis process is still unclear. In this work, we present systematic studies to understand the growth of Bi 2 O 2 Se films and nanosheet. The atomic layer deposition (ALD) method is first used to prepare the bismuth precursor for the CVD growth of Bi 2 O 2 Se. The amount of the precursor can be effectively controlled by the ALD method, and it is helpful to understand the growth of the Bi 2 O 2 Se. It is found that the Bi 2 O 2 Se films can be fabricated at a relatively low temperature. The films on the mica substrates follow the layer-by-layer growth mode and those on silicon substrates exhibit a three-dimensional growth mode. The Bi 2 O 2 Se nanosheets can be obtained at higher temperatures on mica substrate and the topography is affected greatly by the concentration of the precursor. The vapor–solid reaction is considered to play the major role during the growth process with low temperature and the vapor–vapor reaction prevails during the growth at higher temperature. In summary, we have provided a new preparation strategy and investigated the growth process of the emerging 2D Bi 2 O 2 Se. The study about the large-scale films and high-quality nanosheets may open up a new path for the urgent need for the preparation and the device fabrication of Bi 2 O 2 Se.