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Details

Autor(en) / Beteiligte
Titel
Efficient monolithic perovskite-Si tandem solar cells enabled by an ultra-thin indium tin oxide interlayer
Ist Teil von
  • Energy & environmental science, 2023-03, Vol.16 (3), p.1223-1233
Ort / Verlag
Cambridge: Royal Society of Chemistry
Erscheinungsjahr
2023
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • Tandem solar cells are promising for overcoming the theoretical single junction solar cell efficiency limit. Here we report an elegant approach to monolithically integrate perovskites and Si-heterojunction tandem solar cells using an ultra-thin indium tin oxide (ITO) interlayer. It is found that a 1.7 nm ITO interlayer is sufficient to provide the interfacing between the silicon and perovskite subcells with minimum parasitic resistance and efficient trap states for carrier recombination. Thinner ITO interlayers result in discontinuous films while thicker ITO interlayers with improved lateral conductivity are less effective in localising shunts especially for large (≥1 cm 2 ) area tandem cells. Furthermore, it is found that a tandem cell with a 26 nm thick 〈p〉a-Si:H junction in the bottom cell performs better than that with a 13 nm thick junction. When combined with a 1.7 nm ultra-thin ITO layer and a front anti-reflection coating, our champion 1.0 cm 2 cell achieved 27.2% power conversion efficiency (PCE) and a fill factor (FF) of 82.4% under reverse scan. This FF is the highest of any perovskite-Si tandem cell. The ultra-thin ITO layer is suitable for large area cells. 24.2% efficiency was demonstrated on an 11.8 cm 2 cell. A 21.1% efficient 65.1 cm 2 (∼4 inch round) cell was also fabricated. This representative cell shows negligible efficiency loss after 600 hours of continuous 1 sun illumination under MPP tracking. This work provides insights into the role of ultra-thin interfacing ITO layers for monolithic large-area perovskite-Si tandem cells. An ultra-thin indium tin oxide interlayer design was developed for interfacing perovskite solar cells with Si solar cells thereby minimising shunting effects for large area monolithic tandem devices.
Sprache
Englisch
Identifikatoren
ISSN: 1754-5692
eISSN: 1754-5706
DOI: 10.1039/d2ee04007g
Titel-ID: cdi_proquest_journals_2786899518

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