Details

Autor(en) / Beteiligte

• An, Yiping
• Wang, Yifan
• Wu, Yujin
• Yang, Jiazhen

Titel

Conduction Mechanism and Influencing Factors of SiC MOSFET

Ist Teil von

• Journal of physics. Conference series, 2023-02, Vol.2435 (1), p.12021

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2023

Quelle

Electronic Journals Library

Beschreibungen/Notizen

• Abstract With the rapid development of the microelectronics industry, power semiconductor devices are getting more and more attention from the industry. At the same time, discussions on the application of power semiconductor materials have never stopped. Over the years, SiC material has stood out because of its superior physical characteristics. Compared with traditional Si MOSFET technology, SiC MOSFET technology has better physical characteristics in some aspects and has a broader market prospect. This paper introduces the conduction mechanism of SiC MOSFET and its performance factors, and the volume effect, bias temperature instability, and threshold voltage drift of SiC MOSFET are discussed. This paper is helpful in understanding the broad application prospects of SiC MOSFET technology and the difference and reform between SiC MOSFET and traditional Si MOSFET.