Details

Autor(en) / Beteiligte

• Han, Yaqi
• Zhang, Hui
• Xie, Xinjian
• Liu, Zefeng
• Geng, Kangqi
• Yang, Yun
• Zhang, Yushuo
• Chen, Guifeng

Titel

The relationship between annealing and nitrogen flow ratios during magnetron sputtering of AlN films

Ist Teil von

• Applied physics. A, Materials science & processing, 2023-02, Vol.129 (2), Article 122

Ort / Verlag

Berlin/Heidelberg: Springer Berlin Heidelberg

Erscheinungsjahr

2023

Quelle

SpringerNature Journals

Beschreibungen/Notizen

• In this paper, we focus on the morphology, internal stress and defect changes of aluminum nitride (AlN) films at the different nitrogen (N 2 ) flow ratio during high-temperature annealing, and makes a theoretical explanation. When the N 2 flow ratio is 70%, the AlN films have the most stable properties and the best quality. According to Raman analysis, the internal stress of the annealed AlN films is reduced. In combination with atomic force microscopy (AFM) and scanning electron microscopy (SEM) tests, the heat-treated AlN films show voids and undergo grain rearrangement, which provides evidence for high-temperature annealing to reduce film defects and dislocations. The ultraviolet (UV) transmission spectroscopy results show that the annealing improves the optical properties of AlN films by increasing the transmittance and band gap. This work enriches the basic mechanism of heat treatment morphology change and explores the relationship between N 2 parameters and annealing, which is of important significance for obtaining high quality AlN films.