Details

Autor(en) / Beteiligte

• Zhang, Ruiqin
• Zheng, Qiwen
• Cui, Jiangwei
• Li, Yudong
• Yu, Xuefeng
• Lu, Wu
• Guo, Qi

Titel

Bias Dependence of Total Ionizing Dose Response in UTBB FD-SOI transistors

Ist Teil von

• IEEE transactions on nuclear science, 2022-12, Vol.69 (12), p.1-1

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2022

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• The impact of continuous bias on Ultra-Thin Body and Buried oxide Fully Depleted Silicon on Insulator (UTBB FD-SOI) transistors during Total Ionizing Dose (TID) irradiation is investigated by device with the single transistor or multiple transistors in parallel. Experimental data of the single transistor shows that TID bias effect is masked by TID response variation caused by process fluctuation between devices. While, device with multiple transistors in parallel still exhibits the similar TID bias effect as traditional SOI transistor (TG > OFF > Ground > ON), where process fluctuations between devices are well controlled. Focusing on UTBB FD-SOI parallel transistors, by comparing the results of various bias conditions, the impacts of drain, gate and back-gate bias on TID response of transistors are summarized in detail. Particularly, applying both positive and negative back-gate bias to transistors during TID radiation can obviously increase the TID damage of UTBB FD-SOI parallel transistors, which should be considered in TID mitigation technique through dynamic back-gate bias. Combined with TCAD simulation, the generation process of oxide trapped charges in buried oxide (BOX) under different biases is discussed. And, bias dependence of TID response is analyzed from three aspects: fraction of holes escaping initial recombination, holes capture cross section and spatial distribution of oxide trapped charges. Finally, TID mitigation calibration law of pMOSFETs is investigated by the empirical model of back-gate radiation bias effect.