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Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation
Ist Teil von
IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6705
Ort / Verlag
New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Erscheinungsjahr
2022
Link zum Volltext
Quelle
IEEE Xplore Digital Library
Beschreibungen/Notizen
This work proposes forming-free HfO2-based resistance random access memory (RRAM) using X-ray irradiation which overcomes the bottleneck of the conventional forming process, that of the need for a larger forming voltage with scaling. In addition, a large irradiation area is beneficial to the mass production of memory devices. This forming-free device has a better memory window compared to the device without X-ray irradiation. Moreover, the forming-free device has good reliability as the device without X-ray irradiation. To analyze the physical mechanism, the conduction mechanism was investigated by the current-fitting technique, and irradiation experiments with varying X-ray energies and times were performed. Finally, a physical model is proposed to explain the mechanism of the forming-free RRAM from X-ray irradiation.