IEEE electron device letters, 2022-11, Vol.43 (11), p.1909-1912
2022
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Details
- Autor(en) / Beteiligte
- Titel
- Geometrical and Structural Design Schemes for Trench-Shaped Vertical Channel Transistors Using Atomic-Layer Deposited In-Ga-Zn-O
- Ist Teil von
- IEEE electron device letters, 2022-11, Vol.43 (11), p.1909-1912
- Ort / Verlag
- New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
- Erscheinungsjahr
- 2022
- Quelle
- IEEE Xplore Digital Library
- Beschreibungen/Notizen
- Trench-structured In-Ga-Zn-O vertical thin-film transistors (T-VTFT) was fabricated with a channel length of 400 nm. T-VTFTs showed channel width-dependent field-effect mobility owing to the back-channel scattering, and the mobility of 24.1 cm2[Formula Omitted]Vs was finally obtained with a channel width of [Formula Omitted]. Alternatively, the asymmetric operations of conventional mesa-shaped VTFTs were improved in a symmetrical way owing to the structural benefits of the T-VTFT, leading to excellent immunity against the drain-induced barrier lowering.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2022.3210162Titel-ID: cdi_proquest_journals_2728570529
- Format
- –
- Schlagworte
- Indium gallium zinc oxide, Semiconductor devices, Structural design, Thin film transistors