Applied physics. A, Materials science & processing, 2022-11, Vol.128 (11), Article 994
2022
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Details
- Autor(en) / Beteiligte
- Titel
- Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer
- Ist Teil von
- Applied physics. A, Materials science & processing, 2022-11, Vol.128 (11), Article 994
- Ort / Verlag
- Berlin/Heidelberg: Springer Berlin Heidelberg
- Erscheinungsjahr
- 2022
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe 2 layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency. Graphical abstract
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0947-8396eISSN: 1432-0630DOI: 10.1007/s00339-022-06117-4Titel-ID: cdi_proquest_journals_2727218195
- Format
- –
- Schlagworte
- Absorption, Applied physics, Characterization and Evaluation of Materials, Condensed Matter Physics, Copper indium gallium selenides, Doping, Electric contacts, Machines, Manufacturing, Materials science, Nanotechnology, Optical and Electronic Materials, Photovoltaic cells, Physics, Physics and Astronomy, Processes, Solar cells, Surface chemistry, Surfaces and Interfaces, Thickness, Thin Films