Details

Autor(en) / Beteiligte

• Kusiak, Andrzej
• Chassain, Clément
• Canseco, Alejandro Mateos
• Ghosh, Kanka
• Cyrille, Marie-Claire
• Serra, Anna Lisa
• Navarro, Gabriele
• Bernard, Mathieu
• Tran, Nguyet-Phuong
• Battaglia, Jean-Luc

Titel

Temperature‐Dependent Thermal Conductivity and Interfacial Resistance of Ge‐Rich Ge2Sb2Te5 Films and Multilayers

Ist Teil von

• Physica status solidi. PSS-RRL. Rapid research letters, 2022-04, Vol.16 (4), p.n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2022

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• This article reports on the thermal characterization of Ge‐rich Ge2Sb2Te5 films and Ge2Sb2Te5/Ge‐rich Ge2Sb2Te5 multilayers designed for high‐temperature applications in the field of phase‐change memory. The thermal conductivities of such materials and the thermal boundary resistance with the Si3N4 dielectric material are characterized by two different photothermal techniques. The phase change in Ge‐rich Ge2Sb2Te5 is found to occur at a temperature higher than that of the Ge2Sb2Te5 alloy. The Ge2Sb2Te5/Ge rich Ge2Sb2Te5 multilayer has been observed to feature two phase changes corresponding to Ge‐rich Ge2Sb2Te5 and Ge2Sb2Te5. Finally, it is estimated that the thermal resistance of the interface separating Ge‐rich Ge2Sb2Te5 and Ge2Sb2Te5 nanolayers constitutes the multilayer structure and its contribution has been realized to be significant in enhancing the thermal resistance of the multilayer structure. Herein, the thermal properties of germanium, antimony, and tellurium based chalcogenide alloys are investigated, engineered, and designed for phase change memory applications. Temperature‐dependent thermal conductivity of the monolayer and effective thermal conductivity of the multilayered structures are reported. The thermal conductivity of the multilayer structure is found to be lower than that of the two constitutive materials.