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Hot carrier effects on Brillouin amplification in semiconductor magneto-plasmas
Ist Teil von
Indian journal of physics, 2022, Vol.96 (12), p.3651-3663
Ort / Verlag
New Delhi: Springer India
Erscheinungsjahr
2022
Link zum Volltext
Quelle
SpringerLink (Online service)
Beschreibungen/Notizen
A theoretical formulation followed by numerical analysis is carried out to study the hot carrier effects (HCEs) on Brillouin amplification in semiconductor magneto-plasmas. The threshold condition for the onset of Brillouin amplification and the parameters characterizing Brillouin amplification (viz. Brillouin amplification coefficient, transmitted intensity of Brillouin scattered Stokes mode and Brillouin cell efficiency) of the Brillouin cell are estimated. Numerical analysis is made for three different Brillouin cells (consisting of
n
-InSb,
n
-GaAs and
n
-CdS) illuminated by a pulsed CO
2
laser. HCEs of intense pump beam modify the momentum transfer collision frequency of plasma carriers and consequently the nonlinearity of the Brillouin medium, which in turn (i) lowers the threshold intensity, (ii) enhances the parameters characterizing Brillouin amplification, (iii) shifts the enhanced Brillouin gain spectrum toward smaller values of magnetic field, and (iv) widens the range of magnetic field at which peak of Brillouin gain spectrum (around resonances) occur. The incorporation of HCEs in the analysis lead to better understanding of laser-plasma interactions and validate the selection of appropriate Brillouin medium for the fabrication of efficient Brillouin amplifiers.