Details

Autor(en) / Beteiligte

• Kalinovskii, V. S.
• Kontrosh, E. V.
• Grebenshchikova, E. A.
• Andreev, V. M.

Titel

Mesa Architecture and Efficiency of InGaP/Ga(In)As/Ge Solar Cells

Ist Teil von

• Technical physics, 2022-03, Vol.67 (3), p.234-241

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• It is shown that the mesa architecture and the achieved quality of the side surfaces of the mesa structure of multijunction concentrator solar cells provide an increase in their efficiency up to 36.7% at a concentration ratio of up to 100× times (AM0; 0.136 W/cm 2 ). The architecture of mesa structures with the subsequent separation of epitaxial wafers of monolithic InGaP/Ga(In)As/Ge nanoheterostructures into chips was carried out by the method of one-stage chemical etching in an HBr : H 2 O 2 : H 2 O solution (8 : 1 : 100), through a photoresist mask to a depth of 12–18 μm. The conditions for one-stage etching are determined, which ensure the formation of a smooth and even mesa side surface of the InGaP/Ga(In)As/Ge nanoheterostructure containing layers of different composition and thickness. Determination of the activation energy showed that etching occurs in the diffusion region of the heterogeneous process. With an increase in the etchant temperature from 2 to 36°C, a change in the inclination angle in the region of the Ge substrate from 4.5° to 25° is observed, which makes it possible to optimize the number of concentrator solar cells and their quality during the final mechanical separation of the epitaxial wafer into chips.