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Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum
Ist Teil von
Physics of the solid state, 2022-03, Vol.64 (3), p.107-117
Ort / Verlag
Moscow: Pleiades Publishing
Erscheinungsjahr
2022
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
The effects observed in the Shubnikov–de Haas oscillation regime in the HgCdTe/HgTe/HgCdTe heterostructure with a wide (20.3 nm) HgTe quantum well with an inverted band structure are discussed. In a topologically trivial 2D system, a π-shift of magnetooscillation phase is found. A thorough experimental study and theoretical analysis of the data is presented to understand the physical causes of this anomalous phase shift. The effective electron mass
m
c
/
m
0
= (0.022 ± 0.002) obtained from the region of doubly degenerate magnetoresistance peaks is approximately half the theoretical estimates. In the region of stronger magnetic fields, for non-degenerate magnetoresistance peaks, we have
m
c
/
m
0
= (0.034 ± 0.003), which is in good agreement with both theoretical predictions and experimental results obtained from the analysis of activation conductivity in the quantum Hall effect regime. The reasons for this discrepancy are discussed.