Details

Autor(en) / Beteiligte

• Jang, Seunghyun
• Son, Byoungtaek
• Sim, Myungbo
• Kim, Kihwan
• Lee, Yongsoo
• Choi, Tae Young
• Lee, Yongsu
• Choo, Byoung Kwon
• Baek, Seungin
• Kim, Yongjo

Titel

14‐4: Enhanced Low Temperature Polycrystalline Silicon Thin‐Film Transistor Device Structure by Doping at Channel Edge

Ist Teil von

• SID International Symposium Digest of technical papers, 2022-06, Vol.53 (1), p.151-154

Ort / Verlag

Campbell: Wiley Subscription Services, Inc

Erscheinungsjahr

2022

Quelle

Wiley Online Library

Beschreibungen/Notizen

• In this study, we propose a new low temperature polycrystalline silicon thin film transistor structure with good driving and reliability characteristics. The structure was proposed through TCAD simulation and verified through several simulation models. Thereafter, actual devices were manufactured to prove that characteristics were improved.