Details

Autor(en) / Beteiligte

• Zhong, Hai
• Li, Mingqiang
• Zhang, Qinghua
• Yang, Lihong
• He, Ri
• Liu, Fang
• Liu, Zhuohui
• Li, Ge
• Sun, Qinchao
• Xie, Donggang
• Meng, Fanqi
• Li, Qiang
• He, Meng
• Guo, Er‐jia
• Wang, Can
• Zhong, Zhicheng
• Wang, Xinqiang
• Gu, Lin
• Yang, Guozhen
• Jin, Kuijuan
• Gao, Peng
• Ge, Chen

Titel

Large‐Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity

Ist Teil von

• Advanced materials (Weinheim), 2022-06, Vol.34 (24), p.n/a

Ort / Verlag

Weinheim: Wiley Subscription Services, Inc

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Hafnia‐based compounds have considerable potential for use in nanoelectronics due to their compatibility with complementary metal–oxide–semiconductor devices and robust ferroelectricity at nanoscale sizes. However, the unexpected ferroelectricity in this class of compounds often remains elusive due to the polymorphic nature of hafnia, as well as the lack of suitable methods for the characterization of the mixed/complex phases in hafnia thin films. Herein, the preparation of centimeter‐scale, crack‐free, freestanding Hf0.5Zr0.5O2 (HZO) nanomembranes that are well suited for investigating the local crystallographic phases, orientations, and grain boundaries at both the microscopic and mesoscopic scales is reported. Atomic‐level imaging of the plan‐view crystallographic patterns shows that more than 80% of the grains are the ferroelectric orthorhombic phase, and that the mean equivalent diameter of these grains is about 12.1 nm, with values ranging from 4 to 50 nm. Moreover, the ferroelectric orthorhombic phase is stable in substrate‐free HZO membranes, indicating that strain from the substrate is not responsible for maintaining the polar phase. It is also demonstrated that HZO capacitors prepared on flexible substrates are highly uniform, stable, and robust. These freestanding membranes provide a viable platform for the exploration of HZO polymorphic films with complex structures and pave the way to flexible nanoelectronics. The fabrication of centimeter‐scale, crack‐free, freestanding Hf0.5Zr0.5O2 nanomembranes is reported, and their robust ferroelectricity is confirmed. By transferring freestanding Hf0.5Zr0.5O2 membranes to transmission electron microscopy grids, the phases, orientations, grain‐size distributions, and grain boundaries are atomically characterized from plan‐view. This work opens a new paradigm for exploring the complex structures and unconventional ferroelectricity in polymorphic Hf0.5Zr0.5O2 using plan‐view imaging.