Details

Autor(en) / Beteiligte

• Zhao, Chao
• Tien Khee Ng
• Tseng, Chien-Chih
• Li, Jun
• Shi, Yumeng
• Wei, Nini
• Zhang, Daliang
• Giuseppe Bernardo Consiglio
• Prabaswara, Aditya
• Abdullah Ali Alhamoud
• Albadri, Abdulrahman M
• Alyamani, Ahmed Y
• Zhang, X X
• Lain-Jong, Li
• Ooi, Boon S

Titel

InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

Ist Teil von

• RSC advances, 2017-01, Vol.7 (43), p.26665-26672

Ort / Verlag

Cambridge: Royal Society of Chemistry

Erscheinungsjahr

2017

Link zum Volltext

Quelle

Elektronische Zeitschriftenbibliothek (Open access)

Beschreibungen/Notizen

• The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.