Details

Autor(en) / Beteiligte

• Ding, Liqiang
• Cai, Xiaowu
• Xia, Ruirui
• Zhao, Fazhan

Titel

A simplified over-temperature protection structure for smart power ICs

Ist Teil von

• Analog integrated circuits and signal processing, 2022-06, Vol.111 (3), p.451-460

Ort / Verlag

New York: Springer US

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This work introduces and compares four types of over temperature protection circuit in 0.25 μm BCD technology. The core temperature detection circuit of the four types are formed by a single BJT, double BJT, double MOSFET, BJT and MOSFET, respectively. Through the constructive analysis, it can be found that the fourth design is the most suitable one to be used in practice. Captured data shows that the proposed design circuit can effectively work under 200 °C, and its bias current has a power supply rejection ratio more than 72.08 dB. The small enough process corner deviation (maximum process corner deviation is 8.4 °C), good robustness, small chip area (the core chip area is 0.089 mm 2 ) and lower power consumption make this design suitable for practical application, especially, for smart power ICs.