Details

Autor(en) / Beteiligte

• Wang, Yibo
• Han, Genquan
• Xu, Wenhui
• You, Tiangui
• Hu, Haodong
• Liu, Yan
• Zhang, Xinchuang
• Huang, Hao
• Ou, Xin
• Ma, Xiaohua
• Hao, Yue

Titel

Recessed-Gate Ga₂O₃-on-SiC MOSFETs Demonstrating a Stable Power Figure of Merit of 100 mW/cm² Up to 200 °C

Ist Teil von

• IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1945-1949

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2022

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• Recessed-gate <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-gallium oxide (Ga 2 O 3 ) MOSFETs on the heterogeneous Ga 2 O 3 -on-SiC (GaOSiC) wafer are fabricated and characterized. The GaOSiC transistors with an <inline-formula> <tex-math notation="LaTeX">{L}_{\mathrm {SD}} </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">11~{\mu } \text{m} </tex-math></inline-formula> exhibit the decent and stable electrical characteristics with the temperature varying from 25 °C to 200 °C, including a breakdown voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\mathrm {br}} </tex-math></inline-formula>) of 1000 V, a specific ON-resistance (<inline-formula> <tex-math notation="LaTeX">{R}_{\mathrm{\scriptscriptstyle ON},\mathrm {sp}} </tex-math></inline-formula>) of ~100 m <inline-formula> <tex-math notation="LaTeX">{\Omega }~\cdot </tex-math></inline-formula> cm 2 , a drive current of 91 mA/mm, and a power figure of merit (P-FOM) of ~100 MW/cm 2 . Characterization of the transfer length method (TLM) structure fabricated on the same heterogeneous wafer demonstrates that the reduced transfer length (<inline-formula> <tex-math notation="LaTeX">{L}_{T} </tex-math></inline-formula>) at the <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 /Ti/Au contact interface compensates for the increased sheet resistance (<inline-formula> <tex-math notation="LaTeX">{R}_{\mathrm {SH}} </tex-math></inline-formula>) of <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 film at the elevated temperature, which leads to the stable electrical performance of the GaOSiC devices.