IEEE electron device letters, 2022-03, Vol.43 (3), p.402-405
2022
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Details
- Autor(en) / Beteiligte
- Titel
- Effect of Current on the Inhomogeneous Light Emission From AlGaInP-Based Flip-Chip Red Mini-LEDs
- Ist Teil von
- IEEE electron device letters, 2022-03, Vol.43 (3), p.402-405
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2022
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- The distributions of the electroluminescence of AlGaInP-based flip-chip red light-emitting diodes with a size of <inline-formula> <tex-math notation="LaTeX">100\,\,\mu \text{m}\,\,\times 200\,\,\mu \text{m} </tex-math></inline-formula> have been obtained via microscopic hyperspectral imaging by capturing spatially resolved light emission from the side of a transparent substrate. As the injected DC current exceeds the current corresponding to the maximum external quantum efficiency, the light emission from the current crowding region decreases due to the self-heating effect, whereas the emission of the region corresponding to the anode becomes dominant due to the low heat resistance.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2022.3146450Titel-ID: cdi_proquest_journals_2633047022
- Format
- –
- Schlagworte
- Aluminum gallium indium phosphides, Anode effect, Anodes, Electroluminescence, Flip-chip devices, Heat resistance, High temperature effects, Hyperspectral imaging, Light emission, Light emitting diodes, Microscopy, Mini-LEDs, Quantum efficiency, self-heating, spatially resolved electroluminescence, Substrates, Temperature measurement, Thermal resistance