Details

Autor(en) / Beteiligte

• Shengurov, V.G.
• Chalkov, V.Yu
• Denisov, S.A.
• Trushin, V.N.
• Zaitsev, A.V.
• Nezhdanov, A.V.
• Pavlov, D.A.
• Filatov, D.O.

Titel

Growth defects in GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with co-evaporation of Sn

Ist Teil von

• Journal of crystal growth, 2022-01, Vol.578, p.126421, Article 126421

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2022

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •GeSn/Ge/Si(001) epitaxial layers were grown by hot wire chemical vapor deposition.•Nucleation of α-Sn particles is main mechanism of strain relaxation in GeSn layers.•β-Sn islands forming on GeSn layers due to Sn segregation were identified by CRM. We report on the investigation of the growth defect formation in the GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with simultaneous co-evaporation of Sn from an effusion cell. The nucleation of α-Sn nanoinclusions in the course of the growth process was found to be the main mechanism of elastic strain relaxation in the Ge1-xSnx epitaxial layers at x>2.5% as opposed to the misfit dislocation formation at the GeSn/Ge interfaces. Also, β-Sn nanoislands nucleating on the surface of the GeSn epitaxial layers with increased Sn concentration due to Sn segregation were identified by confocal Raman microscopy.