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Efficiency of Injecting Radiation Defects during Irradiation of Silicon n+–p Structures with Fast Electrons
Ist Teil von
Applied solar energy, 2021-05, Vol.57 (3), p.188-191
Ort / Verlag
Moscow: Pleiades Publishing
Erscheinungsjahr
2021
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
The results of an experimental study of the formation of recombination radiation-defect sites in
n
+
–
p
silicon structures during irradiation with high-energy electrons have been presented. It has been shown that zinc doping into
p
-Si to a number density comparable to boron does not change the lifetime of minority charge carriers (τ). It has been found that an increase in the zinc number density to 6 × 10
14
cm
–3
in doped
n
+
–
p
structures leads to a decrease in the radiation damage coefficients of τ by a factor more than 3. A mechanism explaining the effect of Zn impurities on the process of radiation defect formation in silicon structures has been proposed.