Details

Autor(en) / Beteiligte

• Tashmetov, M. Yu
• Makhkamov, Sh
• Sattiev, A. R.
• Erdonov, M. N.
• Kholmedov, Kh. M.

Titel

Efficiency of Injecting Radiation Defects during Irradiation of Silicon n+–p Structures with Fast Electrons

Ist Teil von

• Applied solar energy, 2021-05, Vol.57 (3), p.188-191

Ort / Verlag

Moscow: Pleiades Publishing

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The results of an experimental study of the formation of recombination radiation-defect sites in n + – p silicon structures during irradiation with high-energy electrons have been presented. It has been shown that zinc doping into p -Si to a number density comparable to boron does not change the lifetime of minority charge carriers (τ). It has been found that an increase in the zinc number density to 6 × 10 14 cm –3 in doped n + – p structures leads to a decrease in the radiation damage coefficients of τ by a factor more than 3. A mechanism explaining the effect of Zn impurities on the process of radiation defect formation in silicon structures has been proposed.