Details

Autor(en) / Beteiligte

• Yang, Jong-Heon
• Byun, Chun-Won
• Pi, Jae-Eun
• Kim, Hee-Ok
• Hwang, Chi-Sun
• Yoo, Seunghyup

Titel

Double-Gate and Body-Contacted Nonvolatile Oxide Memory Thin-Film Transistors for Fast Erase Programming

Ist Teil von

• IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.120-126

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2022

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• In this study, we present programming speed enhancement in amorphous oxide semiconductor memory thin-film transistor (TFT). We developed a nonvolatile memory transistor based on InZnSnO back-channel-etch TFT with InGaZnO charge storage layer inserted between gate insulators. We proposed double-gate (DG) and body-contacted (BC) memory structure to improve memory erase speed, which is the most important issue in oxide memory TFTs. DG memory did not show sufficient improvement due to large voltage drop in second gate insulator. BC memory, which can control back-channel potential directly, showed significant improvement on memory program/erase speed.