Details

Autor(en) / Beteiligte

• Lin, Yow-Jon
• Chang, Hsing-Cheng
• Chuang, C.Y.
• Lu, Ping-En
• Huang, Jing-Shiuan

Titel

Electrical and ferromagnetic properties of p-type ZnO thin films with and without the addition of graphene prepared by the sol-gel method

Ist Teil von

• Journal of alloys and compounds, 2022-01, Vol.890, p.161796, Article 161796

Ort / Verlag

Lausanne: Elsevier B.V

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •Incorporating graphene (Gr) into ZnO forms the substitution of carbon for zinc.•ZnO films with and without the addition of Gr show p-type conductivity.•Holes originate from the competition between the densities of donors and acceptors.•The magnetic properties of ZnO are affected by the addition of Gr.•Gr doping leads to the increased intensity of the ferromagnetic signal. This study determines the effect of the addition of graphene on the electrical and ferromagnetic properties of the ZnO thin films that are prepared by the sol-gel method. ZnO is a typically oxygen-deficient metal oxide and exhibits intrinsic n-type conductivity. ZnO thin films to which graphene is added and those to which it is not, which are annealed at 500 °C for 30 min in oxygen, exhibit p-type behavior. There is an increase in the hole concentration of the graphene-doped ZnO thin film because of competition between the densities of donor-like defects such as oxygen vacancies and acceptor-like defects such as oxygen interstitials (Oi) and the defect complex that is related to the substitution of carbon for zinc (CZn) and Oi. There is ferromagnetism in a ZnO thin film at room temperature because of the presence of Oi. The intensity of the ferromagnetic signal is increased because CZn and Oi are formed in a graphene-doped ZnO thin film.