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Selection of the silicon sensor thickness for the Phase-2 upgrade of the CMS Outer Tracker
Ist Teil von
Journal of instrumentation, 2021-11, Vol.16 (11), p.P11028
Ort / Verlag
Bristol: IOP Publishing
Erscheinungsjahr
2021
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Abstract
During the operation of the CMS experiment at the
High-Luminosity LHC the silicon sensors of the Phase-2 Outer Tracker
will be exposed to radiation levels that could potentially
deteriorate their performance. Previous studies had determined that
planar float zone silicon with n-doped strips on a p-doped substrate
was preferred over p-doped strips on an n-doped substrate. The last
step in evaluating the optimal design for the mass production of
about 200 m
2
of silicon sensors was to compare sensors of
baseline thickness (about 300 μm) to thinned sensors (about
240 μm), which promised several benefits at high radiation
levels because of the higher electric fields at the same bias
voltage. This study provides a direct comparison of these two
thicknesses in terms of sensor characteristics as well as charge
collection and hit efficiency for fluences up to
1.5 × 10
15
n
eq
/cm
2
. The measurement results
demonstrate that sensors with about 300 μm thickness will
ensure excellent tracking performance even at the highest considered
fluence levels expected for the Phase-2 Outer
Tracker.