Details

Autor(en) / Beteiligte

• Sun, Y Q
• Wu, Z H
• Yin, J
• Fang, Y Y
• Wang, H
• Dai, J N
• Zhang, J
• Yu, C H
• Feng, C
• Chen, C Q

Titel

The effects of growth temperature of AlN buffer layers on a-plane GaN grown on r-plane sapphire by MOCVD

Ist Teil von

• Journal of physics. Conference series, 2011-02, Vol.276 (1), p.012185-8

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2011

Quelle

Free E-Journal (出版社公開部分のみ）

Beschreibungen/Notizen

• To grow high quality a-GaN films on r-sapphire substrates, it is essential to optimize the buffer layers (BLs) growth parameters such as temperature, thickness, and V/III ratio. In this work, we investigated the effects of growth temperature for AlN BLs on the surface morphology and the crystal quality of a-GaN films. The films studied here were grown epitaxially by metalorganic chemical-vapor deposition (MOCVD) with different AlN BLs grown at 690 °C, 720 °C, 750 °C, respectively. The properties of a-GaN films were comprehensively studied via high resolution x-ray diffraction (HRXRD), optical microscope (OM) and atomic force microscope (AFM). It is found that the crystal quality and the surface morphology of a-GaN films have been remarkably affected by the growth temperature of the AlN BLs. At the optimum AlN BLs growth temperature of 720 °C, the a-GaN films have the best crystal quality – and the smoothest surface morphology with the (1120) HRXRD FWHM of 864 arcsec and the root mean square (RMS) surface roughness of 1.2 nm, respectively.