Details

Autor(en) / Beteiligte

• Espinosa-Cuellar, L. D.
• Lastras-Martínez, L. F.
• Balderas-Navarro, R. E.
• Castro-García, R.
• Lastras-Martínez, A.
• Flores-Camacho, J. M.
• Panah, Mohammad Esmail Aryaee
• Semenova, Elizaveta
• Lavrinenko, Andrei V.

Titel

TO-phonon anisotropies in a highly doped InP (001) grating structure

Ist Teil von

• Applied physics letters, 2021-10, Vol.119 (14)

Ort / Verlag

Melville: American Institute of Physics

Erscheinungsjahr

2021

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• For zinc blende semiconductors, such as InP, the Raman selection rules for a backscattering configuration from the (001) surface forbid the transversal optical (TO) phonon mode, whereas the longitudinal optical mode is allowed. However, when InP is highly doped with Si atoms, InP-Si clusters with the reduced C 3 v symmetry allow TO modes in the Raman spectrum with the backscattering configuration. Here, we demonstrate that the amplitude of the TO modes can be modulated spatially by using a highly doped InP grating. By exciting the sample with a laser linearly polarized parallel and perpendicular to the grating grooves, we observe a change in amplitude of the phonon optical response for the TO mode.