Details

Autor(en) / Beteiligte

• Oleynik, V L
• Prudaev, I A
• Novikov, Vad A
• Ryaboshtan, Yu L
• Gorlachuk, P V

Titel

Study of electric field distribution in AlGalnP light-emitting diode by Kelvin probe force microscopy

Ist Teil von

• Journal of physics. Conference series, 2014-10, Vol.541 (1), p.12057

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2014

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• This work presents results of study of different AlGaInP light-emitting diodes by using Kelvin force probe microscopy. Study of current-voltage characteristics and electric field distribution had shown that for all type of experimental samples containing multiple quantum wells the most significant series resistance of heterostructures is determined by p-isotype heterojunction and confinement p-layer.