Details

Autor(en) / Beteiligte

• Parveen, Bushra
• Hassan, Mahmood-ul
• Atiq, Shahid
• Ali, Ghulam
• Iqbal, Muhammad Faisal
• Safeer, Affan
• He, Liang

Titel

Dielectric and impedance spectroscopic analysis of Sn1−xZrxO2 ferromagnetically-like behavior semiconductors

Ist Teil von

• Journal of magnetism and magnetic materials, 2021-11, Vol.537, p.168227, Article 168227

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2021

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• •Co-precipitation method is used to grow single phase Sn1−xZrxO2 ferromagnetically-like behavior Semiconductors.•XRD determine nano Crystallite nature of Sn1−xZrxO2.•The synthesized samples show responses to the incident frequencies.•The ac conductivity is enhanced due to Zr doping giving significance results.•The impedance analysis shows the contribution of grains and grains boundaries.•The observed room temperature ferromagnetic-like behavior indicates potential magnetic storage applications.•The synthesized DMS nanoparticles have useful spintronic applications. The multifunctional and tunable properties of semiconductors can be achieved by intentional doping of the host lattice with appropriate impurities. In this study, the structure, ferromagnetism and dielectric response of Zr doped SnO2 nano-crystallites, fabricated using co-precipitation technique, have been investigated. X-ray diffraction studies confirm the successful fabrication of Zr doped SnO2 along with one minor peak belonging to SnO. The measured surface morphology shows non-uniform and denser grain distribution. The optical studies show decaying band gaps. The impedance analysis reveals grains and grain boundaries conduction exhibiting different relaxation times. The maximum grains capacitance has been observed in 4% of Zr content. Furthermore, above room temperature ferromagnetic-like behavior is observed, which is quite attractive for magnetic device applications. Hence, the studied diluted magnetic semiconductors are appealing not only for fundamental physics but also for technical applications in frequency related devices and in data processing and storage devices.