Details

Autor(en) / Beteiligte

• Smirnov, A A
• Shevchenko, S A
• Ivanov, B V
• Ilyin, V A
• Afanasyev, A V

Titel

Investigation of the temperature effect on the dynamic parameters of ultrafast silicon carbide current switches

Ist Teil von

• Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12036

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2018

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• The results of a theoretical and experimental study of temperature effect on a switching process of a 4H-SiC drift step recovery diode are presented. The effect of the injected charge losses lowering at high temperatures is demonstrated.