Details

Autor(en) / Beteiligte

• Wagenpfeil, M.
• Schneider, J.
• Murra, M.
• Schulte, D.
• Weinheimer, C.
• Michel, T.
• Anton, G.
• Adhikari, G.
• Al Kharusi, S.
• Angelico, E.
• Arnquist, I.J.
• Beck, D.
• Bolotnikov, A.
• Breur, P.A.
• Brown, E.
• Brunner, T.
• Caden, E.
• Chernyak, D.
• Craycraft, A.
• Daniels, T.
• Darroch, L.
• de St. Croix, A.
• Deslandes, K.
• Di Vacri, M.L.
• Dolinski, M.J.
• Echevers, J.
• Elbeltagi, M.
• Ferrara, S.
• Feyzbakhsh, S.
• Gallina, G.
• Giacomini, G.
• Gingras, C.
• Goeldi, D.
• Gorham, A.
• Gornea, R.
• Gratta, G.
• Hansen, E.V.
• Hardy, C.A.
• Heffner, M.
• Hoppe, E.W.
• House, A.
• Jamil, A.
• Jewell, M.
• Karelin, A.
• Kaufman, L.J.
• Kuchenkov, A.
• Kumar, K.S.
• Lan, Y.
• Leach, K.G.
• Leonard, D.S.
• Li, G.
• Licciardi, C.
• Lindsay, R.
• MacLellan, R.
• Massacret, N.
• McElroy, T.
• Medina Peregrina, M.
• Mong, B.
• Moore, D.C.
• Murray, K.
• Nattress, J.
• Natzke, C.R.
• Newby, R.J.
• Nolet, F.
• Nusair, O.
• Nzobadila Ondze, J.C.
• Odgers, K.
• Odian, A.
• Orrell, J.L.
• Overman, C.T.
• Piepke, A.
• Pratte, J.-F.
• Raguzin, E.
• Ramonnye, G.J.
• Retière, F.
• Richard, C.
• Richman, M.
• Ringuette, J.
• Robinson, A.
• Rossignol, T.
• Saldanha, R.
• Soma, A.K.
• Spadoni, F.
• Stekhanov, V.
• Stiegler, T.
• Tarka, M.
• Thibado, S.
• Tidball, A.
• Todd, J.
• Totev, T.
• Triambak, S.
• Tsang, R.
• Viel, S.
• Vivo-Vilches, C.
• Walent, M.
• Worcester, M.
• Wu, S.X.
• Yan, W.
• Yang, L.
• Zeldovich, O.

Titel

Reflectivity of VUV-sensitive silicon photomultipliers in liquid Xenon

Ist Teil von

• Journal of instrumentation, 2021-08, Vol.16 (8), p.P08002

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2021

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. The reflectivity is determined to be 25–36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.