Details

Autor(en) / Beteiligte

• Bogdanov, S V
• Lelekov, E T
• Kovalev, I V
• Zelenkov, P V
• Lelekov, A T

Titel

Measurements of high impedance two-terminal device with SMU NI PXIe-4139

Ist Teil von

• IOP conference series. Materials Science and Engineering, 2016-11, Vol.155 (1), p.12027

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2016

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• To measure high-frequency and low-frequency impedance of betavoltaic power sources (it can be represented as two-terminal device), measurement stand was created. To measure high-frequency part need to inject external test signal through the current transformer with waveform generator and need to use external high-frequency current sensor, because of SMU PXIe-4139 current channel limitations.