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29.1: Invited Paper: Degradation Mechanism of High Mobility Oxide Thin Film Transistors for Next Generation Display
Ist Teil von
SID International Symposium Digest of technical papers, 2021-08, Vol.52 (S2), p.395-398
Ort / Verlag
Campbell: Wiley Subscription Services, Inc
Erscheinungsjahr
2021
Link zum Volltext
Quelle
Wiley Online Library Journals
Beschreibungen/Notizen
AC stress was applied to the IWZO thin film transistor with high mobility, and its deterioration phenomenon was observed. As a result, a rare phenomenon in which the ON current deteriorates was observed. A deterioration model was proposed by reference experiments using DC stress, emission analysis using an emission microscope, and electric field distribution analysis using a device simulator. It was concluded that the deterioration is due to hot carriers that occur when the gate electric field changes from ON to OFF.